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HAT2139H
Silicon N Channel Power MOS FET Power Switching
REJ03G0055-0500 Rev.5.00 Sep 20, 2005
Features
* * * * Capable of 7 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 9 m typ. (at VGS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK )
5 D 5 4 4 G 1, 2, 3 Source 4 Gate 5 Drain SSS 123
3 12
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Tc = 25C 3. Value at Tch = 25C, Rg 50 Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 3 EAR Note 3 Pch Note2 Tch Tstg Ratings 40 20 20 80 20 10 8 15 150 -55 to +150 Unit V V A A A A mJ W C C
Rev.5.00 Sep 20, 2005 page 1 of 7
HAT2139H
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 40 20 -- -- 2.0 -- -- 15 -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 9.0 11.0 25 2000 290 175 30 8 5 17 23 58 10 0.83 50 Max -- -- 10 1 3.5 11.5 15.0 -- -- -- -- -- -- -- -- -- -- -- 1.08 -- Unit V V A A V m m S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 40 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 10 A, VGS = 10 V Note4 ID = 10 A, VGS = 7 V Note4 ID = 10 A, VDS = 10 V Note4 VDS = 10 V, VGS = 0, f = 1 MHz
VDD = 10 V, VGS = 10 V, ID = 20 A
VGS = 10 V, ID = 10 A, VDD 10 V, RL = 1.0 , Rg = 4.7 IF = 20 A, VGS = 0 Note4 IF = 20 A, VGS = 0 diF/ dt = 50 A/ s
Rev.5.00 Sep 20, 2005 page 2 of 7
HAT2139H
Main Characteristics
Power vs. Temperature Derating
40 1000
Maximum Safe Operation Area
Pch (W)
ID (A)
30
100
Channel Dissipation
20
10
Drain Current
DC PW Op = 10 10 er at ms ion Operation in this area is 1 limited by RDS(on)
10 s 10 0 1 s m s
0
50
100
150
200
Tc = 25C 1 shot Pulse 0.1 0.1 1
10
100
Case Temperature
Tc (C)
Drain to Source Voltage
VDS
(V)
Typical Output Characteristics
20 10 V 4.5 V 4.2 V 20
Typical Transfer Characteristics
VDS = 10 V Pulse Test
ID (A)
4.0 V 12 3.8 V 8
ID (A) Drain Current
16
16
12
Drain Current
8 Tc = 75C 4 25C -25C
4
VGS = 3.5 V Pulse Test
0
2
4
6
8
10
0
2
4
6
8
10
Drain to Source Voltage
VDS (V)
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source On State Resistance RDS(on) (m) Drain to Source Voltage VDS(on) (mV)
400 Pulse Test
Static Drain to Source on State Resistance vs. Drain Current
100 Pulse Test 50
300
20 VGS = 7 V 10 10 V 5
200
100
ID = 10 A
5A 2A
2 1 1 3 10 30 100
0
4
8
12
16
20
Gate to Source Voltage
VGS (V)
Drain Current
ID (A)
Rev.5.00 Sep 20, 2005 page 3 of 7
HAT2139H
Static Drain to Source on State Resistance vs. Temperature
35 Pulse Test 30 25 20 15 VGS = 7 V 10 5 0 -25 10 V
Static Drain to Source on State Resistance RDS(on) (m)
Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance |yfs| (S)
100
10
Tc = -25C
ID = 10 A
2 A, 5 A
1 25C 0.1
75C
ID = 2 A, 5 A, 10 A
VDS = 10 V Pulse Test 0.01 0.01 0.1 1 10 100
0
25
50
75
100 125 150
Case Temperature
Tc
(C)
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
10000 VGS = 0 f = 1 MHz
Body-Drain Diode Reverse Recovery Time
Reverse Recovery Time trr (ns)
100
Capacitance C (pF)
50
3000 Ciss 1000
20 di/dt = 50 A/s VGS = 0, Ta = 25C
300 Coss Crss 100 0 10 20 30 40
10 0.1
0.3
1
3
10
30
100
Reverse Drain Current
IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
VDS (V)
ID = 20 A
VGS VDD = 25 V 10 V 5V VDS
Switching Characteristics
VGS (V)
20 1000 300 100 30 10 tr 3 1 0.1 td(on) tf VGS = 10 V , VDS = 10 V Rg = 4.7 , duty 1 % 0.3 1 3 10 30 100 td(off)
50
Drain to Source Voltage
30
12
20
8
10
VDD = 25 V 10 V 5V 10 20 30 40
4 0 50
0
Gate to Source Voltage
Switching Time t (ns)
40
16
Gate Charge
Qg (nc)
Drain Current
ID (A)
Rev.5.00 Sep 20, 2005 page 4 of 7
HAT2139H
Reverse Drain Current vs. Source to Drain Voltage
20
(mJ)
Maximum Avalanche Energy vs. Channel Temperature Derating
10 IAP = 10 A VDD = 15 V duty < 0.1 % Rg 50
Reverse Drain Current IDR (A)
10 V 16 5V 12 VGS = 0.5 V 8
Repetitive Avalanche Energy EAR
8
6
4
4 Pulse Test 0 0.4 0.8 1.2 1.6 2.0
2
0 25
50
75
100
125
150
Source to Drain Voltage
VSD
(V)
Channel Temperature Tch (C)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t)
3 Tc = 25C 1 D=1 0.5 0.3
0.2
0.1
0.1
ch - c(t) = s (t) * ch - c ch - c = 8.33C/ W, Tc = 25C PDM
t ho pu lse
0.05
0.03
0.02 1 0.0
1s
D= PW T
PW T
0.01 10
100
1m
10 m
100 m
1
10
Pulse Width PW (s)
Avalanche Test Circuit
Avalanche Waveform
1 2 L * IAP2 * VDSS VDSS - VDD V(BR)DSS IAP VDD VDS
VDS Monitor
L IAP Monitor
EAR =
Rg
D. U. T
ID
Vin 15 V 50 0 VDD
Rev.5.00 Sep 20, 2005 page 5 of 7
HAT2139H
Switching Time Test Circuit
Vin Monitor D.U.T. Rg RL VDS = 10 V 90% td(on) tr 90% td(off) tf Vin Vout Vin 10 V 10% 10% 10% Vout Monitor
Switching Time Waveform
90%
Rev.5.00 Sep 20, 2005 page 6 of 7
HAT2139H
Package Dimensions
JEITA Package Code
SC-100
RENESAS Code
PTZZ0005DA-A
Package Name LFPAK
MASS[Typ.] 0.080g
Unit: mm
4.9 5.3 Max 4.0 0.2 5
0.25 -0.03
+0.05
3.3
1.0
3.95
1
4
6.1 -0.3
+0.1
0 - 8
1.1 Max +0.03 0.07 -0.04
0.75 Max 1.27 0.10 0.40 0.06
0.25 M
0.6 -0.20 1.3 Max
+0.25
0.20 -0.03
+0.05
(Ni/Pd/Au plating)
Ordering Information
Part Name HAT2139H-EL-E Quantity 2500 pcs Taping Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.5.00 Sep 20, 2005 page 7 of 7
4.2
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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